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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6467 2N6468 DESCRIPTION With TO-66 package Excellent safe operating area Complement to type 2N6465 2N6466 APPLICATIONS For use in audio amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO PARAMETER CONDITIONS 2N6467 2N6468 Collector-base voltage VCEO VEBO IC PD Tj Tstg INCH Collector-emitter voltage ANG 2N6467 2N6468 EMIC ES Open emitter Open base Open collector DUC ON VALUE -110 TOR UNIT V -130 -100 V -120 -5 -4 V A W ae ae Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25ae 40 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS 2N6467 2N6468 SYMBOL MIN TYP. MAX UNIT 2N6467 VCEO(SUS) Collector-emitter sustaining voltage 2N6468 IC=-50mA ;IB=0 -100 V -120 VCEsat Collector-emitter saturation voltage IC=-1.5A; IB=-0.15A -1.2 V VBE Base-emitter on voltage IC=-1.5A ; VCE=-4V -1.5 V 2N6467 ICBO Collector cut-off current 2N6468 VCB=-110V; IE=0 -10 VCB=-130V; IE=0 |I A ICEO Collector cut-off current 2N6467 VCE= -100V,IB=0 2N6468 VCE= -120V,IB=0 IEBO Emitter cut-off current hFE DC current gain fT Transition frequency HAN INC SEM GE VEB=-5V; IC=0 OND IC TOR UC -100 -10 |I 150 |I A A IC=-1.5A ; VCE=-4V 15 IC=-0.5A ; VCE=-10V 5 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6467 2N6468 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 |
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